The CMPD1001 is a high current switching diode manufactured by Central Semiconductor Corp. It has a maximum reverse voltage of 90 V, a maximum forward current of 250 mA, a maximum repetitive forward current of 600 mA, a maximum repetitive reverse current of 600 mA, a transient forward current of 6000 mA, a transient forward current of 1000 mA, a power dissipation of 350 mW, an operating and storage junction temperature of -65 to +150 oC, and a thermal resistance of 357 oC/W.
The Central Semiconductor CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process. They are designed for applications requiring high current capability and are available in three configurations: CMPD1001 (Single), CMPD1001S (Dual, in series), and CMPD1001A (Dual, common anode).
| Continuous Reverse Voltage | 90 V |
|---|---|
| Continuous Forward Current | 250 mA |
| Peak Repetitive Forward Current | 600 mA |
| Forward Surge Current (tp=1s) | 1000 mA |
| Power Dissipation | 350 mW |
| Operating and Storage Junction Temperature | -65 to +150 °C |
| Thermal Resistance | 357 °C/W |
| Reverse Leakage Current (VR=90V) | 100 nA |
| Forward Voltage (Ip=10mA) | 0.75 V |
| Forward Voltage (Ip=50mA) | 0.84 V |
| Forward Voltage (Ip=100mA) | 0.90 V |
| Forward Voltage (Ip=200mA) | 1.00 V |
| Forward Voltage (Ip=400mA) | 1.25 V |
| Reverse Recovery Time | 50 ns |
The series is available as CMPD1001 (Single), CMPD1001S (Dual, in series), and CMPD1001A (Dual, common anode).
The maximum continuous forward current is 250 mA.
The operating and storage junction temperature range is -65 to +150 °C.