This document describes the features of IPB09N03LA, IPI09N03LA, and IPP09N03LA OptiMOS®2 power transistors, including their suitability for high-frequency DC/DC converters, N-channel, logic level, excellent gate charge x RDS(on) product (FOM), very low on-resistance, superior thermal resistance, 175°C operating temperature, and dv/dt rating.
This document is a product summary and technical specification sheet for the Infineon IPB14N03LA, IPI14N03LA, and IPP14N03LA OptiMOS Power-Transistors. The devices are N-channel logic-level transistors designed specifically for high-frequency DC/DC converters.
| Continuous drain current (Tc=25°C) | 50 A |
|---|---|
| Operating temperature range | -55 ...175 °C |
| Thermal resistance, junction-case (RthJC) | 2.4 K/W |
| Total gate charge (typical) | 14 nC |
The device supports a continuous drain current of up to 50 A when the case temperature is maintained at 25 °C.
The transistor can operate with a maximum junction temperature of 175 °C.
It absorbs an avalanche energy of 75 mJ for a single pulse with a current of 45 A and a resistance of 25 Ω.