This document describes the features and characteristics of IPB05N03LA, IPI05N03LA, and IPP05N03LA OptiMOS®2 power transistors, including their suitability for high-frequency dc/dc converters, excellent gate charge x R DS(on) product, very low on-resistance, superior thermal resistance, and 175°C operating temperature.
The document provides a comprehensive technical overview of the IPB05N03LA, IPI05N03LA, and IPP05N03LA OptiMOS Power-Transistors. These N-channel logic-level devices are designed for high-frequency dc/dc converter applications and feature very low on-resistance (RDS(on)) and superior thermal resistance.
| Avalanche energy, single pulse | 190 mJ |
|---|---|
| Gate source voltage max | ±20 V |
| Power dissipation (TC=25 °C) | 94 W |
| Operating and storage temperature | -55 ... 175 °C |
| Drain-source breakdown voltage | 25 V |
| Thermal resistance, junction-case (RthJC) | 1.6 K/W |
The device supports an operating and storage temperature range of -55 to 175 °C.
The document covers three models: IPB05N03LA, IPI05N03LA, and IPP05N03LA.