This is a product specification for BAT160 series Schottky barrier double diodes. The specification introduces the features and characteristics of the product, including low switching losses, high surge current absorption capability, fast recovery time, plastic SMD package, etc.
The document describes the Philips BAT160 series, which consists of planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package. Key features include low switching losses, the capability to absorb very high surge currents, fast recovery time, and guard ring protection.
| Continuous reverse voltage (per diode) | - 60 V |
|---|---|
| Continuous forward current (per diode) | - 1 A |
| Non-repetitive peak forward current | - 10 A |
| Storage temperature | -65 +150 [°C] |
| Junction temperature | - 150 °C |
The maximum continuous reverse voltage per diode is 60 V.
The maximum continuous forward current per diode is 1 A.
The storage temperature ranges from -65 to +150 °C.