This datasheet introduces the features and characteristics of the 1PS70SB10, 1PS70SB14, 1PS70SB15, 1PS70SB16 Schottky barrier diodes
This document is a product specification datasheet from Philips Semiconductors dated April 26, 1999. It details the technical specifications for four models of Schottky barrier (double) diodes: 1PS70SB10, 1PS70SB14, 1PS70SB15, and 1PS70SB16.
The devices are planar Schottky barrier diodes encapsulated in a very small plastic SOT323 (SC-70) surface-mounted device package. The datasheet provides features such as low forward voltage, ultra high-speed switching capabilities, and applications including protection circuits and blocking diodes.
| Continuous reverse voltage | - 30 V |
|---|---|
| Continuous forward current | - 200 mA |
| Repetitive peak forward current | - 300 mA |
| Non-repetitive peak forward current | - 600 mA |
| Total power dissipation (per package) | - 200 mW |
| Junction temperature | - 125 °C |
| Operating ambient temperature | -65 +125 °C |
| Diode capacitance | 10 pF |
The maximum continuous reverse voltage is 30 V.
The maximum continuous forward current is 200 mA.
The maximum total power dissipation is 200 mW.