This document describes the features of the 1PS70SB20 Schottky barrier diode, including ultra high switching speed, low forward voltage, guard ring protection, and small SMD plastic package. It is suitable for ultra high-speed switching, voltage clamping, and protection circuits.
The document is a technical specification sheet for the Philips 1PS70SB20, a discrete semiconductor component. It describes an ultra-high-speed switching Schottky barrier diode housed in a small SOT323 (SC-70) plastic surface-mounted device package with an integrated guard ring.
Key features highlighted include low forward voltage and suitability for applications such as ultra high-speed switching, voltage clamping, and protection circuits. The datasheet details limiting values, electrical characteristics at 25°C, thermal resistance, and graphical data regarding forward current, reverse current, and capacitance.
| Continuous reverse voltage (Vr) | 40 V |
|---|---|
| Continuous forward current (Ir) | 500 mA |
| Storage temperature (Tstg) | -65 to +150 °C |
| Junction temperature (Tj) | 125 °C |
The device supports a maximum continuous reverse voltage of 40 V.
It is rated for a continuous forward current of up to 500 mA.