1PS59SB20 is a Schottky barrier diode produced by Philips Semiconductors. It features ultra-fast switching speed, low forward voltage, guard ring protected, small SMD package. It is suitable for high-speed switching, voltage clamping, protection circuits etc.
This document is a product specification datasheet for the Philips 1PS59SB20, a planar Schottky barrier diode designed with an integrated guard ring for stress protection. The device is housed in a small SMD plastic SC-59 package (SOT346) and is intended for high-speed switching, voltage clamping, and protection circuits.
| Continuous reverse voltage | 40 V |
|---|---|
| Continuous forward current | 500 mA |
| Non-repetitive peak forward current | 2 A |
| Storage temperature | -65 +150 °C |
| Junction temperature | 125 °C |
| Forward voltage | 550 mV |
| Reverse current | 100 HA |
| Diode capacitance | 60 90 pF |
| Thermal resistance junction to ambient | 500 Kw |
The device can withstand a continuous reverse voltage of up to 40 V.
It is rated for a maximum continuous forward current of 500 mA.
The device can be stored between -65 °C and +150 °C.