1PS59SB10 series Schottky barrier (double) diodes features low forward voltage, guard ring protected, small SMD package. Applications include ultra high-speed switching, voltage clamping, protection circuits and blocking diodes.
This document is a product specification datasheet for the Philips 1PS59SB10 series of Schottky barrier diodes. The devices are planar diodes encapsulated in a small plastic SC59 surface-mount device (SMD) package. They are available as single or double diodes with various pin configurations.
| Continuous reverse voltage | 30 V |
|---|---|
| Continuous forward current | 200 mA |
| Repetitive peak forward current | 300 mA |
| Non-repetitive peak forward current | 600 mA |
| Total power dissipation | 250 mW |
| Storage temperature | -65 +150 °C |
| Junction temperature | 125 °C |
| Forward voltage (Ip = 10 mA) | 400 mV |
| Reverse recovery time | 5 ns |
| Diode capacitance | 10 pF |
The devices are encapsulated in a SC59 small plastic SMD package.
They are used for ultra high-speed switching, voltage clamping, protection circuits, and blocking diodes.
The maximum junction temperature is 125 °C.