This document describes the features and characteristics of the BAT160 series Schottky barrier double diodes, including low switching losses, capability of absorbing very high surge current, fast recovery time, guard ring protected, and plastic SMD package. The product is suitable for low power switched-mode power supplies, rectification, and polarity protection.
This document is a product specification datasheet for the Philips BAT160 series of Schottky barrier double diodes. The devices are designed for low power switched-mode power supplies, rectification, and polarity protection applications. They feature low switching losses, the capability of absorbing very high surge currents, and a fast recovery time.
| Continuous reverse voltage | 60 V |
|---|---|
| Continuous forward current | 1 A |
| Non-repetitive peak forward current | 10 A |
| Storage temperature | -65 to +150 °C |
| Junction temperature | 150 °C |
| Forward voltage (Ip = 100 mA) | 400 mV |
| Forward voltage (Ip = 1 A) | 650 mV |
| Forward voltage (Ip = 2 A) | 850 mV |
| Reverse current (Vr = 60 V) | 350 uA |
| Diode capacitance | 60 pF |
| Thermal resistance (junction to ambient) | 100 K/W |
The devices are suitable for low power switched-mode power supplies, rectification, and polarity protection.
The maximum continuous forward current is 1 A.
The maximum junction temperature is 150 °C.