This document describes the features and characteristics of the BFT 92W PNP Silicon RF Transistor, which is suitable for broadband amplifiers up to 2GHz with collector currents up to 20mA.
This document is a technical datasheet for the Siemens BFT 92W, a complementary PNP silicon RF transistor designed for broadband amplifiers up to 2 GHz. It provides detailed specifications including maximum ratings such as collector-emitter voltage of 15 V and total power dissipation of 200 mW.
| Collector-emitter voltage (VcEO) | 15 V |
|---|---|
| Collector-base voltage (VcBO) | 20 V |
| Emitter-base voltage (VEBO) | 2 V |
| Collector current (Ic) | 25 mA |
| Total power dissipation (Ptot) | 200 mW |
| Junction temperature (Tj) | 150 °C |
| Transition frequency (fT) typ. | 3.5 GHz |
| DC current gain (hFE) min. | 15 |
The maximum collector-emitter voltage is 15 V.
The maximum total power dissipation is 200 mW.
The maximum collector current is 25 mA.