The document introduces the BFT 93 PNP Silicon RF Transistor from Semiconductor Group. This transistor is suitable for low distortion broadband amplifiers up to 1 GHz, with collector currents ranging from 2mA to 20mA. It has a maximum rated collector-emitter voltage of 12V and a collector current of 35mA. The document also provides the electrical characteristics of the transistor.
This document provides a comprehensive technical overview of the Siemens BFT 93, a PNP silicon RF transistor designed for low distortion broadband amplifiers up to 1 GHz. It specifies operating conditions for collector currents ranging from 2mA to 20mA.
The datasheet details maximum ratings such as a collector-emitter voltage of 12V and a junction temperature of 150°C. It includes extensive electrical characteristics for DC, AC, and noise figures at frequencies up to 1.8 GHz, along with SPICE model parameters for circuit simulation.
| Collector-emitter voltage (VcEO) | 12 V |
|---|---|
| Collector-base voltage (VcBO) | 15 V |
| Emitter-base voltage (VEBO) | 2 V |
| Collector current (Io) | 35 mA |
| Junction temperature (Tj) | 150 °C |
| Transition frequency (fr) at 30mA/8V | 4 to 5.5 GHz |
| Noise figure (F) at 900 MHz | -2.7 dB |
The maximum collector current (Io) is 35 mA.
Yes, it is designed for low distortion broadband amplifiers up to 1 GHz.