This document provides technical specifications for the Siemens BFT 66 and BFT 67, which are epitaxial NPN silicon planar RF transistors housed in a TO 72 case. These devices are intended for input stage applications in extremely low-noise broadband amplifiers operating up to 1 GHz. The terminals are electrically insulated from the case.
The datasheet details maximum ratings, static characteristics, and dynamic characteristics for both models. It includes specific data points such as collector-emitter breakdown voltage, current gain, transition frequency, noise figure, and S-parameters at various frequencies. Additionally, the document presents circuit examples for a low-noise preamplifier (1 to 300 MHz) and a two-stage broadband amplifier (25 to 1000 MHz), along with graphs illustrating power dissipation versus temperature and performance curves.
| Case type | TO 72 |
|---|---|
| Maximum Collector-emitter voltage | 15 V |
| Maximum Collector-base voltage | 20 V |
| Maximum Emitter-base voltage | 2.5 V |
| Maximum Collector current | 30 mA |
| Maximum Junction temperature | 200 °C |
| Total power dissipation | 200 mW |
| Transition frequency (BFT 66) | 3.8 GHz |
| Noise figure (BFT 66) | 1.5 dB |
| Noise figure (BFT 67) | 2.5 dB |
They are intended for input stage applications in extremely low-noise broadband amplifiers up to 1 GHz.
The transistors are designed for use up to 1 GHz.
No, the terminals are electrically insulated from the case.