This document provides technical specifications for the Siemens BFT 98 and BFT 98B NPN silicon RF transistors. These devices are designed for low-distortion broadband amplifier output stages operating up to 1 GHz at collector currents up to 150 mA. The transistors feature integrated emitter stabilizing resistors and are available in a T0-117 package.
| Collector-emitter voltage | 20 V |
|---|---|
| Collector current | 200 mA |
| Total power dissipation | 2.25 W |
| Junction temperature | 150 C |
| Transition frequency | 3.3 GHz |
| DC current gain | 25 |
The transistors are designed for operation up to 1 GHz.
The maximum collector current is 200 mA.
Yes, they come with integrated emitter stabilizing resistors.