BAT120 series Schottky barrier double diodes feature low switching losses, the capability of absorbing very high surge current, fast recovery time, guard ring protected, plastic SMD package. They are widely used in low power switched-mode power supplies, rectification, polarity protection etc.
The document is a data sheet for the Philips BAT120 series Schottky barrier double diodes. These devices are planar Schottky barrier diodes encapsulated in a plastic SOT223 surface-mount device (SMD) package, designed with a collector pad for good heat transfer.
Key features include low switching losses and the capability to absorb very high surge currents. The series is intended for applications such as low power switched-mode power supplies, rectification, and polarity protection.
| Continuous reverse voltage (per diode) | 25 V |
|---|---|
| Continuous forward current (per diode) | 1 A |
| Non-repetitive peak forward current | 10 A |
| Storage temperature range | -65 to +150 °C |
| Junction temperature (max) | 125 °C |
| Forward voltage (typical, Ip = 100 mA) | 260 mV |
| Reverse current (max, Vr = 25 V) | 1 mA |
| Diode capacitance (typical) | 100 pF |
The maximum continuous reverse voltage per diode is 25 V.
Each diode can handle a continuous forward current of 1 A.