BLF2022-120 is a high power gain LDMOS transistor from Philips Semiconductors. It is designed for broadband operation (HF to 2.2 GHz).
This document is a preliminary specification for the BLF2022-120, a UHF push-pull power LDMOS transistor. It is designed for broadband operation from HF to 2.2 GHz, specifically targeting common source class-AB operation for PCN and PCS applications in the 2000 to 2200 MHz frequency range. The device features high power gain, easy power control, and excellent ruggedness, with a source connection on the underside to eliminate DC isolators.
| Power (PL) | 120 W (PEP) |
|---|---|
| Drain Current (DC) | 18 A |
| Package Type | SOT539A |
The transistor is designed for broadband operation from HF to 2.2 GHz.
The maximum drain-source voltage rating is 65 V.