BLF202 is a HF/VHF power MOS transistor produced by Philips Semiconductors. It features high power gain, easy power control, gold metallization, good thermal stability and full load mismatch capability. It is suitable for communications transmitters in the HF/VHF range with a nominal supply voltage of 12.5V.
The document is a product specification sheet for the BLF202, an N-channel enhancement mode vertical D-MOS transistor designed for communications transmitters in the HF/VHF range. It features high power gain and gold metallization, housed in an 8-lead SOT409A SMD package with a ceramic cap.
The datasheet details limiting values such as a maximum drain-source voltage of 40 V and total power dissipation of 5.7 W at Tmb < 85 °C. It includes typical electrical characteristics like input capacitance (5.3 pF) and output capacitance (78 pF), along with specific application information for Class-B operation, including test circuit diagrams and component lists.
| Drain-source voltage (Max) | 40 V |
|---|---|
| Gate-source voltage (Max) | 20 V |
| DC drain current (Max) | 1 A |
| Total power dissipation (Tmb < 85 °C) | 5.7 W |
| Junction temperature (Max) | 200 °C |
| Input capacitance | 5.3 pF |
| Output capacitance | 78 pF |
| Forward transconductance (Min) | 80 mS |
The nominal supply voltage for communications transmitters in the HF/VHF range is 12.5 V.
It is available in an 8-lead SOT409A SMD package with a ceramic cap.
The maximum rated junction temperature is 200 °C.