This datasheet is about PEMH10 and PUMH10, which are NPN/NPN transistors with built-in bias resistors.
The document describes the PEMH10 and PUMH10 series of NPN/NPN resistor-equipped transistors, which integrate R1 (2.2 kΩ) and R2 (47 kΩ) bias resistors to reduce component count and simplify digital applications. These devices are designed as low-current peripheral drivers or replacements for general-purpose transistors in IC input control circuits.
The datasheet provides comprehensive technical specifications, including limiting values such as a maximum collector-emitter voltage of 50 V and an output current of 100 mA. It also details thermal characteristics, electrical parameters like DC current gain, and package outlines for the SOT666 (PEMH10) and SOT363 (PUMH10) surface-mounted packages.
| Collector-emitter voltage (VCEO) | 50 V |
|---|---|
| Output current (DC) and peak collector current | -100 mA |
| R1 bias resistor value | 2.2 kΩ |
| R2 bias resistor value | 47 kΩ |
| Total power dissipation (SOT363) | 200 mW |
| DC current gain (hFE) | 100 |
The PEMH10 is available in the SOT666 package, while the PUMH10 uses the SOT363 package.
The device can operate in an ambient temperature range from -65 °C to +150 °C.