This data sheet provides detailed information about the PUMH9 product, including product features, application scenarios, external dimensions, pin definitions, etc.
The Philips PUMH9 is an NPN resistor-equipped double transistor designed to simplify circuit design by integrating built-in bias resistors (R1 typ. 10 kΩ and R2 typ. 47 kΩ). This component eliminates the need for external resistors in inverter circuit configurations, thereby reducing the number of components and board space required. It is particularly suitable for applications requiring space reduction in interface and driver circuits.
| Collector-emitter voltage (open base) | 50 V |
|---|---|
| Emitter-base voltage (open collector) | 10 V |
| Input voltage (positive) | +40 V |
| Input voltage (negative) | -10 V |
| Output current (DC) | 100 mA |
| Peak collector current | 100 mA |
| Total power dissipation (per transistor) | 200 mW |
| Total power dissipation (per device) | 300 mW |
| Storage temperature | -65 to +150 °C |
| Junction temperature | 150 °C |
| Operating ambient temperature | -65 to +150 °C |
| Input resistor | 10 kΩ |
| Package type | SC-88 (SOT363) |
The maximum total power dissipation is 300 mW when the device is mounted on an FR4 printed-circuit board.
The typical value of the input resistor R1 is 10 kΩ.