Philips PUMH7 NPN Resistor-Equipped Double Transistor Datasheet

The PUMH7 is an NPN double transistor with built-in bias resistor R1 (typ. 4.7 kΩ). It has no mutual interference between the transistors and simplifies circuit design. It reduces the number of components and board space. The PUMH7 is especially suitable for space reduction in interface and driver circuits and inverter circuit configurations without use of external resistors.


Philips PUMH7 NPN Resistor-Equipped Double Transistor Datasheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
51 KB
Published
05 July, 2012
Updated
30 September, 2023
MD5 checksum
5D04449873F96923E9537652ECB262F1

About this manual

The document describes the Philips PUMH7, which is an NPN resistor-equipped double transistor designed to simplify circuit design by reducing component count and board space. It features built-in bias resistors (typically 4.7 kΩ) for each transistor, eliminating the need for external resistors in many inverter configurations.

What's inside

  • Features
  • Applications
  • Description
  • Pinning
  • Marking
  • Limiting Values
  • Thermal Characteristics
  • Characteristics

Specifications

Collector-emitter voltage (open base)- 50 V
Emitter-base voltage (open collector)- 5 V
Output current (DC)- 100 mA
Peak collector current- 100 mA
Total power dissipation (per transistor)- 200 mW
Storage temperature-65 +150 °C
Junction temperature- 150 °C
Operating ambient temperature-65 +150 °C
Total power dissipation (per device)- 300 mW

Frequently asked questions

What is the maximum total power dissipation for one transistor?

The maximum total power dissipation per transistor is 200 mW when the ambient temperature is below 25 °C.

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