Philips BUK100-50GS PowerMOS Transistor Datasheet

The BUK100-50GS TOPFET is a temperature and overload protected power MOSFET for automotive systems and other applications.


Philips BUK100-50GS PowerMOS Transistor Datasheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
11
File format
PDF
File size
115 KB
Published
06 July, 2012
Updated
30 September, 2023
MD5 checksum
F950A01BDB9948385C3A988785311AE9

About this manual

The document describes the Philips BUK100-50GS, a PowerMOS transistor featuring a vertical DMOS output stage. It is designed as a general-purpose switch for automotive applications such as driving lamps, motors, solenoids, and heaters. The device includes built-in protection features against over temperature, short circuit loads, and overvoltage transients.

What's inside

  • Description
  • Quick Reference Data
  • Applications
  • Features
  • Limiting Values
  • Thermal Characteristics
  • Static Characteristics
  • Switching Characteristics

Specifications

Continuous drain source voltage50 V
Continuous drain current (25°C)15 A
Total power dissipation40 W
Continuous junction temperature150 °C
Drain-source on-state resistance100 mΩ

Frequently asked questions

What is the maximum continuous drain current for this transistor at a junction temperature of 25 °C?

The device supports a continuous drain current of up to 15 A when the junction temperature is 25 °C.

What is the maximum total power dissipation allowed at a case temperature of 25 °C?

The transistor can dissipate a maximum of 40 W when the case temperature does not exceed 25 °C.

At what junction temperature will the over-temperature protection circuit activate?

The device triggers its over-temperature protection when the internal junction reaches 150 °C.

What is the maximum continuous drain current if the case temperature rises to 100 °C?

The allowable continuous drain current drops to 9.5 A when the case temperature reaches 100 °C.

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