This PDF document describes the Philips Semiconductors PowerMOS transistor BUK101-50GL, which is an overload protected logic level power MOSFET. The transistor features low on-state resistance and overload protection, making it suitable for general switching in automotive systems and other applications.
The document is a product specification sheet for the Philips Semiconductors PowerMOS transistor model BUK101-50GL. This device is described as a monolithic temperature and overload protected logic level power MOSFET in a 3-pin plastic envelope, intended for use as a general purpose switch in automotive systems and other applications.
Key features include vertical power DMOS output stage technology with low on-state resistance, overload protection against over-temperature and short circuit loads, latched overload protection reset by a 5V logic compatible input, and overvoltage clamping for turnoff of inductive loads. The datasheet details limiting values, thermal characteristics, static and switching parameters, and provides typical characteristic curves. This manual is written in Chinese.
| Continuous drain source voltage (VDS) | 50 V |
|---|---|
| Continuous drain current (ID) at Tmb ≤ 25 °C | 26 A |
| Total power dissipation (PD) | 75 W |
| Continuous junction temperature (Tj) | 150 °C |
| Drain-source on-state resistance (RDS(ON)) | 60 m Ω |
The device features overload protection against over temperature, which operates at a threshold junction temperature of 150 °C.
The maximum continuous drain current is 26 A when the case temperature is 25 °C.
The maximum total power dissipation is 75 W at a case temperature of 25 °C.
The over temperature protection trips at a threshold junction temperature of 150 °C.