This document describes the features and characteristics of the PUMH11 NPN resistor-equipped double transistor, including built-in bias resistors R1 and R2, no mutual interference between transistors, simplification of circuit design, and reduction of components and board space. This product is especially suitable for space reduction in interface and driver circuits, as well as inverter circuit configurations without the use of external resistors.
The document describes the Philips PUMH11, which is an NPN resistor-equipped double transistor designed to simplify circuit design by reducing component count and board space. It features two transistors with built-in bias resistors (R1 and R2) of approximately 10 kΩ each, eliminating the need for external resistors in inverter configurations.
| Built-in bias resistors (typical) | 10 kΩ each |
|---|---|
| Collector-base voltage (max) | -50 V |
| Total power dissipation (per transistor, Tamb≤25°C) | 200 mW |
| Package type | SC-88 plastic package |
It is especially suitable for space reduction in interface and driver circuits, as well as inverter circuit configurations without external resistors.
The maximum collector-emitter voltage (VCEO) with an open base is 50 V.