ZXMN3B04N8 is a low voltage, high efficiency N-channel MOSFET. It features low on-resistance, high switching speed, low threshold, low gate drive voltage and low profile. This device is suitable for DC-DC converters, power management functions, disconnect switches and motor control applications.
This document is a technical datasheet for the Zetex ZXMN3B04N8 N-Channel Enhancement Mode MOSFET. The device features a unique Trench structure combining low on-resistance with fast switching speed, making it suitable for high-efficiency power management applications such as DC-DC converters and motor control.
The maximum drain-source voltage rating is 30 V.
The typical static drain-source on-state resistance is 0.025 ohms at a gate-source voltage of 4.5 V and a drain current of 7.2 A.