This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
This document is a provisional datasheet for the ZXMN3A14F, an N-Channel Enhancement Mode MOSFET manufactured by Zetex. The device utilizes a unique Trench structure to combine low on-resistance with fast switching speed, making it ideal for high efficiency, low voltage power management applications such as DC-DC converters and motor control.
| Drain-Source Voltage (V(BR)DSS) | 30 V |
|---|---|
| Static Drain-Source On-State Resistance | 0.065 Ohms (Typical) |
| Operating and Storage Temperature Range | -55 to +150 °C |
The device is suitable for DC-DC converters, power management functions, disconnect switches, and motor control.
The operating and storage temperature range extends from -55 to +150 °C.