ZXMD63C03X is a new generation of high density MOSFETs from Zetex. It utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes it ideal for high efficiency, low voltage, power management applications.
This document provides detailed specifications and characteristics for the Zetex ZXMD63C03X Dual N and P-Channel Enhancement Mode MOSFET. It outlines key features such as low on-resistance and fast switching speed, making it suitable for high-efficiency power management applications like DC-DC converters and motor control.
| Drain-Source Breakdown Voltage (N-Channel) | 30 V |
|---|---|
| Drain-Source Breakdown Voltage (P-Channel) | -30 V |
| Continuous Drain Current (N-Channel) | 2.3 A |
| Continuous Drain Current (P-Channel) | -2.0 A |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | SOIC8 / MSOP8 |
The device is ideal for DC-DC Converters, Power Management Functions, Disconnect switches, and Motor control.
The maximum power dissipation for the N-Channel at TA=25°C is 0.87 W.
The document does not explicitly state RoHS compliance, but it notes the device conforms to JEDEC MO-187 package standards.