This document introduces a new generation of high density MOSFETs from Zetex, which combines the benefits of low on-resistance with fast switching speed. They are ideal for high efficiency, low voltage power management applications.
This document is a provisional datasheet issued in July 1999 by Zetex plc. It describes the ZXMD63N03X, a high-density dual N-channel enhancement mode MOSFET designed for power management applications such as DC-DC converters and motor control.
The device features low on-resistance (RDS(on) max 0.200 Ohm), fast switching speeds, and is available in an SOIC package. The datasheet provides absolute maximum ratings, electrical characteristics at Tamb=25°C, typical performance graphs, and detailed mechanical package dimensions conforming to JEDEC MO-187.
| Drain-Source Voltage | 30 V |
|---|---|
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | SOIC |
The device is ideal for DC-DC converters, power management functions, disconnect switches, and motor control.
The operating and storage temperature range extends up to +150 °C.