This is a dual 20V P-channel enhancement mode MOSFET device with low on-resistance, fast switching speed, low threshold, low gate drive and low profile SOIC package. It is suitable for high efficiency, low voltage, power management applications.
The document describes the Zetex ZXMD63P02X, a high-density dual p-channel enhancement mode MOSFET designed for power management applications. Key features include a low on-resistance of 0.27 Ω, fast switching speed, and availability in a low profile SOIC package.
| Drain-Source Voltage | -20 V |
|---|---|
| On-State Resistance | 0.27 Ω |
| Package Type | SOIC |
The maximum power dissipation is 0.87 W at 25°C for a device with one active die.
The operating and storage temperature range is from -55 to +150 °C.