This PDF document introduces a new generation of Zetex trench MOSFETs that combines the benefits of low on-resistance and fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. They feature low threshold, low gate drive, and low profile SOIC package.
The ZXMC3A17DN8 is a complementary pair of N-channel and P-channel enhancement mode MOSFETs featuring a unique trench structure. This design combines low on-resistance with fast switching speed, making the device ideal for high-efficiency, low-voltage power management applications such as motor drives and LCD backlighting. The device is available in a low-profile SOIC package.
| Drain-Source Voltage | 30 V |
|---|---|
| Power Dissipation (P-channel) | 18 W |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | SOIC |
The device is ideal for motor drive and LCD backlighting applications.
The typical static drain-source on-state resistance is 0.050 ohms.
The typical static drain-source on-state resistance is 0.070 ohms.