This document introduces the high-speed SRAM memory produced by IDT, model DSC-5279/03 1. It supports 128K x 36 and 256K x 18 memory configurations, has high system access speed, supports interleaved and linear burst mode, has self-timed write cycle and global write control, suitable for commercial and industrial applications, and operates at 3.3V.
The IDT71V3576/78 are high-speed synchronous SRAMs organized as 128K x 36 or 256K x 18. These devices utilize a self-timed write cycle based on internal logic and support burst mode for enhanced system performance.
The memory is available in JEDEC standard packages including 100-pin TQFP, 119-ball BGA, and 165-fine pitch BGA. It operates with a 3.3V core power supply and includes features such as boundary scan JTAG interface compliance.
| Memory Organization | 128K x 36, 256K x 18 |
|---|---|
| Operating Voltage | 3.3V |
| Clock Access Time (Commercial) | 4.2ns at 133MHz |
| Operating Temperature (Industrial) | -40°C to +85°C |
The device supports 128K x 36 and 256K x 18 memory configurations.
The clock access time is 3.8ns for commercial grade operation.
The core power supply voltage is 3.3V.