This datasheet provides the specifications of the ASI MLN2027SS including ratings, characteristics, maximum, and package dimension.
The document is a technical datasheet for the ASI MLN2027SS, an NPN silicon RF power transistor designed with the Omnigold™ Metalization System. It provides specific ordering information and package details.
Key specifications include a collector current (Ic) of 10A, a maximum voltage (Vos) of 60V, and a power dissipation (Poiss) of 140W at 25°C. The device operates within a junction temperature range of -65 °C to +200 °C.
| Maximum Voltage (Vos) | 60V |
|---|---|
| Power Dissipation (Poiss) | 140 W @ Tc = 25 °C |
| Junction Temperature Range (Tj) | -65 °C to +200 °C |
| Storage Temperature Range (Ts) | -65 °C to +150 °C |
| Thermal Resistance (Buc) | 25 ~C/W |
The maximum power dissipation is 140 W at a case temperature of 25 °C.