IRF9230 is a high voltage power MOSFET transistor produced by International Rectifier company. It has very low on-state resistance, high transconductance, superior reverse energy and diode recovery dv/dt capability.
This document is a datasheet for the International Rectifier IRF9230, a P-Channel HEXFET transistor. It is designed for applications such as switching power supplies, motor controls, inverters, and choppers. The device features a TO-204AA (Modified TO-3) through-hole package and is rated for a drain-to-source voltage of 200V.
| Pulsed Drain Current | -28 A |
|---|---|
| Package Type | TO-204AA (Modified TO-3) |
| Gate Threshold Voltage | -2.0 V |
The suggested gate resistor (RG) value is 7.5 Ω.
The maximum continuous drain current is -6.5 A when the case temperature is 25°C.
The maximum power dissipation is 75 W at a case temperature of 25°C.
The operating junction temperature ranges from -55°C to 150°C.