SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS™ Power Transistor features 600 V VDS, RDS(on) of 0.38 Ω, and ID of 11 A. Its features include: a new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances, and improved transconductance.
This document is a datasheet for the Infineon Cool MOS power transistors, specifically models SPP11N60S5, SPB11N60S5, and SPI11N60S5. These devices are high-voltage power transistors with a rated voltage of 600V and a continuous drain current of 11A at 25°C. The datasheet highlights features such as ultra-low gate charge, periodic avalanche rating, and extreme dv/dt ratings. It provides detailed electrical characteristics, thermal data, and safe operating area graphs.
| Continuous drain current (Tj=25°C) | 11 A |
|---|---|
| Drain-source breakdown voltage | 600 V |
| Power dissipation (Tc = 25°C) | 125 W |
| Operating and storage temperature | -55... +150 °C |
| Drain-source on-state resistance (typical) | 0.38 Ohm |
The maximum continuous drain current at 25°C is 11 A.
The maximum power dissipation at 25°C is 125 W.
The maximum gate-source voltage for DC operation is +20 V.