This document describes the features and characteristics of HUF76132P3 and HUF76132S3S N-Channel power MOSFETs. These products are manufactured using the innovative UltraFET™ process, achieving low on-resistance, high energy tolerance in avalanche mode, and low reverse recovery time. They are suitable for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
The document describes N-Channel Logic Level UltraFET Power MOSFETs manufactured using an innovative process to achieve low on-resistance. These devices are designed for applications requiring high efficiency, such as switching regulators, motor drivers, relay drivers, and power management in portable products.
Key features include a 75A continuous drain current rating at 25°C, a maximum voltage of 30V, and very low reverse recovery time. The datasheet provides absolute maximum ratings, electrical specifications for on/off states and switching characteristics, thermal data, and typical performance curves.
| On-Resistance (Typical) | 0.011 Ohm |
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