This is an N-Channel power MOSFET, manufactured using the innovative UltraFET™ process, with the lowest possible on-resistance per silicon area, resulting in outstanding performance. It is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products.
This document is a datasheet for the Intersil HUF76129P3 and HUF76129S3S, which are N-Channel Logic Level UltraFET Power MOSFETs. These devices utilize an innovative process to achieve low on-resistance per silicon area, making them suitable for switching regulators, motor drivers, and power management applications.
| On-Resistance (Typical) | 0.016 Ohm |
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The device supports a continuous drain current of 56 A when the case temperature is 25°C.