These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA76137.
The document provides a datasheet for the HUF76137P3 and HUF76137S3S N-Channel Logic Level UltraFET Power MOSFETs. These devices utilize Intersil's innovative UltraFET process to achieve low on-resistance per silicon area, making them suitable for switching regulators, motor drivers, and power management applications.
| On-Resistance (Typical) | 0.009 Ohm |
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The typical on-resistance (Rds(on)) is 0.009 Ohm.