This product is a N-channel power MOSFET manufactured using the innovative UltraFET™ process. It has the lowest possible on-resistance per silicon area, resulting in outstanding performance. It is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
The document describes the Intersil HUF76132SK8, an N-Channel power MOSFET manufactured using the UltraFET process. It is designed for applications requiring power efficiency, such as switching regulators, motor drivers, and power management in battery-operated products. The device features a low on-resistance of 0.0115 Ohm and is capable of withstanding high energy in avalanche mode.
| Drain Current (Continuous) | 11.5 A |
|---|---|
| On Resistance (Typical) | 0.0115 Ohm |
The part number is HUF76132SK8.
Yes, add the suffix T to the part number, e.g., HUF76132SK8T.
The former developmental type is TA76131.