This document describes the features and characteristics of the HUF76121P3 and HUF76121S3S products. These products are N-channel power MOSFETs manufactured using the innovative UltraFET™ process. They have high energy withstand capability in avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. They are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
This document is a datasheet for the Intersil HUF76121P3 and HUF76121S3S devices. These are N-Channel Logic Level UltraFET Power MOSFETs manufactured using the innovative UltraFET process to achieve low on-resistance per silicon area.
| Drain to Source Voltage | 30 V |
|---|---|
| Continuous Drain Current | 47 A |
| Power Dissipation | 75 W |
| Operating Temperature Range | -40 to 150 °C |
| On-Resistance (Typical) | 0.021 Ohm |
The part number for the TO-263AB variant in tape and reel is HUF76121S3ST.
The typical drain to source on resistance (RDS(ON)) is 0.021 Ohms at 47A and 10V gate drive.