AOP605 is a high-performance MOSFET in the AOP605 series. It has excellent RDS(ON) and low gate charge. It is suitable for a variety of applications.
The document describes the AOP605, a complementary enhancement mode field effect transistor utilizing advanced trench technology. It consists of an n-channel and a p-channel device forming a high-speed power inverter suitable for various applications.
The datasheet provides absolute maximum ratings, electrical characteristics for both channel types, thermal characteristics, and typical electrical/thermal performance graphs including on-resistance, capacitance, and switching parameters.
The absolute maximum rating for the Drain-Source Voltage is 30 V for the n-channel and -30 V for the p-channel.
The junction and storage temperature range is from -55 to 150 °C.