SMV1129 and SMV1139 are hyperabrupt junction varactor diodes designed for use in VCOs requiring low resistance. The low resistance of these varactors makes them appropriate for high Q resonators in wireless system VCOs to frequencies beyond 2.5 GHz.
This document describes the SMV1129 and SMV1139 silicon hyperabrupt junction varactor diodes designed for use in Voltage Controlled Oscillators (VCOs). These components feature high Q factors due to low series resistance, making them appropriate for high Q resonators in wireless system VCOs operating at frequencies beyond 2.5 GHz.
The datasheet provides absolute maximum ratings, electrical specifications including capacitance and quality factor across various reverse voltages, and typical performance data with graphs. It also includes mechanical dimensions for SOD-323, SC-79, and SC-70 packages and notes that SPICE models are available.
| Forward Current (Ir) | 20 mA |
|---|---|
| Power Dissipation (Pp) | 250 mW |
| Storage Temperature Range | -55°C to +150°C |
| Operating Temperature Range | -55°C to +125°C |
| Reverse Current (IP) | 20 nA |
They are appropriate for high Q resonators in wireless system VCOs to frequencies beyond 2.5 GHz.
The devices are available in SOD-323, SC-79, and SC-70 packages.