Alpha Industries, Inc.'s silicon Schottky diode chips are intended for use as detector and mixer devices in hybrid integrated circuits at frequencies from below 100 MHz to higher than 40 GHz. The chips feature low capacitance, ZBD and low barrier designs, P-type and N-type junctions, and large bond pads.
This datasheet covers the Alpha Industries product line of silicon Schottky diode chips, which are intended for use as detector and mixer devices in hybrid integrated circuits at frequencies from below 100 MHz to higher than 40 GHz. The document details features such as low capacitance designs (ZBD and Low Barrier) and large bond pad chip designs that prevent damage during wire bonding.
| Frequency Range | below 100 MHz to higher than 40 GHz |
|---|---|
| Power Dissipation | 75 mW |
| Forward Current | 50 mA |
| Reverse Voltage Rating | 2.0 V to 4.0 V |
| Operating Temperature | -65 °C to +150 °C |
They are intended for use as detector and mixer devices in hybrid integrated circuits.
It features a 4 mil diameter bond pad that is offset from the semiconductor junction.
P-type Schottky diodes are preferred because they generate lower 1/F noise.