The document provides information about the features of the AOL1440 model, including the use of advanced trench technology to provide excellent RDS(ON), shoot-through immunity, and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. The product is compliant with ROHS and Sony 259 specifications.
The AOL1440 is an N-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology. It is designed to provide excellent shoot-through immunity and body diode characteristics, making it ideally suited for use as a low side switch in CPU core power conversion circuits.
This device is available in two ordering options: the Standard Product AOL1440 which is Pb-free (meeting ROHS & Sony 259 specifications), and the Green Product option AOL1440L. Both variants are electrically identical.
| Drain-Source Voltage (VDS) | 25 V |
|---|---|
| Continuous Drain Current (Ip) @ Tj=25°C | 75 A |
| On-State Drain-Source Resistance (RDS(on)) Max @ VGS=20V | < 3.2 mΩ |
| Junction and Storage Temperature Range | -55 to 175 °C |
| Package Type | UltraSO-8™ |
The maximum junction-to-case thermal resistance is 2 °C/W in steady-state operation.
The typical static drain-source on-resistance is 4 mΩ under those conditions.