HUF75637P3, HUF75637S3S 44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET is a power device launched by Intersil, which has the characteristics of ultra-low on-resistance (rDS(ON) = 0.030 Ω, VGS = 10V) and high temperature stability.
This document is a datasheet for the Intersil HUF75637P3 and HUF75637S3S N-channel UltraFET Power MOSFETs. It provides comprehensive information on absolute maximum ratings, electrical specifications, thermal characteristics, switching parameters, gate charge data, capacitance values, and source-to-drain diode specifications.
| Peak Drain Current | 31 A |
|---|---|
| Drain to Source Voltage | 100 V |
| On-Resistance (Typical) | 0.030 Ohm |
| Operating Temperature Range | -55 to 175°C |
The device supports a continuous drain current of 44 A when the case temperature is 25°C.
The absolute maximum rating for the drain-to-source voltage is 100 V.
The device has an on-resistance of 0.030 Ohm when the gate-to-source voltage is 10 V.