HUF75823D3, HUF75823D3S are Intersil's N-channel ultra-low on-resistance power MOSFETs with 0.150 ohm (VGS = 10V) and provide simulation models for design and use
This document is a datasheet for the Intersil HUF75823D3 and HUF75823D3S N-Channel UltraFET Power MOSFETs. The devices are available in JEDEC TO-251AA and TO-252AA packages, respectively.
| Drain to Source Voltage | 150 V |
|---|---|
| On-Resistance RDS(ON) | 0.150 Ohm |
The maximum continuous drain current is 14 A when the temperature is 25°C.
The maximum power dissipation is 85 W.