This document describes the features and characteristics of HUF75645P3 and HUF75645S3S UltraFET power MOSFET devices, including ultra-low on-resistance, temperature-compensated PSPICE and SABER electrical models, and thermal impedance models.
This document is a datasheet for the Intersil HUF75645P3 and HUF75645S3S, which are 75A, 100V N-Channel UltraFET Power MOSFETs. The devices are available in JEDEC TO-220AB and TO-263AB packages with an ultra-low on-resistance of 0.014 Ohms.
| On-Resistance (Typical) | 0.014 Ohm |
|---|
The maximum continuous drain current is 75 A when the case temperature is 25°C.
The maximum power dissipation is 310 W.