The HUF75639S3R4851 is an N-channel power MOSFET from Intersil that is rated for 56A, 115V, and 0.025 Ohms. This device is manufactured using the innovative UltraFET™ process, which achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. It is designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
The Intersil HUF75639S3R4851 is an N-Channel power MOSFET manufactured using the innovative UltraFET process. This advanced technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. The device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
| Power Dissipation | 200 W |
|---|---|
| Operating and Storage Temperature | -55 to 175 °C |
| Drain to Source On Resistance | 0.025 Ohm |
| Package Type | TO-262AA |
The part can dissipate up to 200 W at a case temperature of 25°C.