HGTP3N60C3D and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.
The HGTP3N60C3D and HGT1S3N60C3DS are MOS-gated high voltage switching devices that combine the high input impedance of MOSFETs with the low on-state conduction loss of bipolar transistors. These devices are ideal for high voltage switching applications operating at moderate frequencies where low conduction losses are essential.