This document describes HUF75333G3, HUF75333P3, and HUF75333S3S, which are 66A, 55V, 0.016 Ohm N-Channel UltraFET Power MOSFETs. These devices are manufactured using the innovative UltraFET™ process, which achieves the lowest possible on-resistance per silicon area and delivers outstanding performance. They can withstand high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. These devices are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
This datasheet describes the HUF75333G3, HUF75333P3, and HUF75333S3S, which are 66A, 55V N-Channel UltraFET Power MOSFETs. These devices are manufactured using the innovative UltraFET process to achieve low on-resistance and are designed for applications requiring power efficiency, such as switching regulators, motor drivers, and power management in portable products.
The document provides absolute maximum ratings, electrical specifications, and typical performance curves for the devices. It includes details on thermal resistance, switching times, gate charge, and capacitance. Additionally, the datasheet offers simulation models for PSPICE and SABER, as well as test circuit diagrams and waveforms for verification.
| Drain to Source Voltage | 66 V |
|---|---|
| Continuous Drain Current | 66 A |
| Drain to Source On Resistance | 0.016 Ohm |
| Operating and Storage Temperature | -55 to 175 °C |
| Thermal Resistance Junction to Case (TO-247) | 1 °C/W |
| Turn-On Time | 100 ns |
| Reverse Recovery Time | 75 ns |
The available part numbers are HUF75333G3, HUF75333P3, and HUF75333S3S.
The devices are available in TO-247, TO-220AB, and TO-263AB packages.