This is a 75A, 55V, 0.012 Ohm, N-channel UltraFET power MOSFET. It is manufactured using an advanced process technology that achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products.
This document provides a comprehensive technical overview of the Intersil HUF75339 series of N-Channel UltraFET Power MOSFETs. These devices utilize advanced process technology to achieve low on-resistance and are designed for high-efficiency applications such as switching regulators, motor drivers, and power management circuits. The datasheet covers three specific package variants: TO-247 (HUF75339G3), TO-220AB (HUF75339P3), and TO-263AB (HUF75339S3S).
| Drain Current (Continuous) | 75A |
|---|---|
| Drain to Source Voltage | 55V |
| On Resistance (Typical) | 0.012 Ohm |
| Operating Temperature Range | -55 to 175 C |
| Thermal Resistance Junction to Ambient (TO-220, TO-263) | 62 C/W |
| Turn-On Time (Typical) | 110 ns |
| Reverse Recovery Time (Typical) | 85 ns |
The maximum continuous drain current is 75A.
Yes, PSPICE and SABER simulation models are available on the Intersil website.