This document describes the features and characteristics of HUF75321P3 and HUF75321S3S, two N-Channel UltraFET power MOSFET devices. These devices are manufactured using the advanced UltraFET process, which results in the lowest possible on-resistance per silicon area and outstanding performance. They can withstand high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. They are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
This document is a datasheet for the Intersil HUF75321P3 and HUF75321S3S N-Channel UltraFET Power MOSFETs. These devices utilize an advanced process technology to achieve low on-resistance per silicon area, making them suitable for high-efficiency applications such as switching regulators, motor drivers, and power management in portable products.
The datasheet provides comprehensive technical information including absolute maximum ratings, electrical specifications (off-state, on-state, switching, capacitance), typical performance curves, test circuits, waveforms, and PSPICE/SABER simulation models. It also includes ordering information for different package variants.
The available part numbers are HUF75321P3 and HUF75321S3S.
The former developmental type was TA75321.