This document introduces HUF75329D3 and HUF75329D3S, two 20A, 55V, 0.026 Ohm N-Channel UltraFET power MOSFETs. These devices are manufactured using the innovative UltraFET process, achieving the lowest possible on-resistance per silicon area and delivering outstanding performance. They can withstand high energy in avalanche mode and have very low reverse recovery time and stored charge in the diode. They are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
This document is a data sheet for the Intersil HUF75329D3 and HUF75329D3S N-Channel power MOSFETs. These devices are manufactured using the innovative UltraFET process to achieve low on-resistance per silicon area. They are designed for applications requiring high efficiency, such as switching regulators, motor drivers, and power management in portable products.
| Drain to Source On Resistance (Typ) | 0.026 Ohm |
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The device is rated for 20A of current and 55V of voltage.